| PART |
Description |
Maker |
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| ZNDC-13-2G |
TV 39C 37#20 2#16 SKT WALL REC 800 MHz - 2000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 1.3 dB INSERTION LOSS-MAX
Directional Coupler 50з 13dB 800 to 2000 MHz
Directional Coupler 50 13dB 800 to 2000 MHz
|
MINI[Mini-Circuits]
|
| BTRM-50 |
Termination BNC 50ohm DC to 2000 MHz 0 MHz - 2000 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Mini-Circuits
|
| ACLM4594FC361K ACLM4594FC36R ACLM4586FC361K ACLM48 |
20 MHz - 500 MHz RF/MICROWAVE LIMITER
1000 MHz - 2000 MHz RF/MICROWAVE LIMITER
18000 MHz - 26500 MHz RF/MICROWAVE LIMITER
100 MHz - 2000 MHz RF/MICROWAVE LIMITER
|
|
| MH383D MH381D MH381B MH383J MH381H |
8000 MHz - 12000 MHz RF/MICROWAVE LIMITER
2000 MHz - 4000 MHz RF/MICROWAVE LIMITER
2000 MHz - 8000 MHz RF/MICROWAVE LIMITER
2000 MHz - 18000 MHz RF/MICROWAVE LIMITER
|
TEMEX COMPONENTS
|
| MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P2 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 |
MRF5S19090L, MRF5S19090LR3, MRF5S19090LSR3 1990 MHz, 18 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| AGR09045E AGR09045EF AGR09045EU |
45 W, 865 MHZ-895 MHZ, N-CHANNEL E-MODE, LATERAL MOSFET
|
PEAK electronics GmbH
|
| MRF5S19100HSR3 MRF5S19100HD MRF5S19100HR3 |
1990 MHz, 22 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFET
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
